3N163 [Linear Systems]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | 3N163 |
| 厂家： | 
Linear Systems |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
D
G
S
G
Case
LOW CAPACITANCE
3
4
2
1
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163
S
D
-40V
-30V
Case
3N164
Transient G-S Voltage (NOTE 1)
Drain Current
Storage Temperature
±125V
50mA
-65°C to +200°C
375mW
18 X 30 MILS
TO-72
Bottom View
Power Dissipation
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164
UNITS CONDITIONS
MIN
MAX
MIN
MAX
IGSSF
Gate Forward Current
TA=+125°C
-10
-10
pA
VGS=-40V
VDS=0 (3N163)
-25
-25
VGS=-30V
VDS=0 (3N164)
VGS=0
BVDSS
BVSDS
VGS(th)
VGS(th)
VGS
Drain-Source Breakdown Voltage -40
Source-Drain Breakdown Voltage -40
-30
ID=-10µA
IS=-10µA
VDS=VGS
VDS=-15V
VDS=-15V
VDS=-15V
VDS=15V
VGS=-20V
VDS=-15V
VDS=-15V
-30
V
VGD=0 VBD=0
ID=-10µA
Threshold Voltage
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
200
400
250
-30
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
400
800
300
-30
Threshold Voltage
ID=-10µA
Gate Source Voltage
ID=-0.5mA
VGS=0
IDSS
Zero Gate Voltage Drain Current
Source Drain Current
pA
ISDS
VGS=VDB=0
ID=-100µA
VGS=-10V
rDS(on)
ID(on)
gfs
Drain-Source on Resistance
On Drain Current
ohms
mA
-5.0
-3.0
Forward Transconductance
Output Admittance
2000
4000
250
2.5
1000
4000
250
2.5
µs
ID=-10mA
f=1kHz
gos
Ciss
Input Capacitance-Output Shorted
Reverse Transfer Capacitance
Output Capacitance Input Shorted
pF
VDS=-15V
ID=-10mA f=1MHz
Crss
0.7
0.7
(NOTE 2)
Coss
3.0
3.0
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
MIN MAX
3N164
MIN MAX
UNITS CONDITIONS
ton
tr
Turn-On Delay Time
12
24
50
12
24
50
ns
VDD=-15V
Rise Time
ID(on)=-10mA
RG=RL=1.4KΩ
(NOTE 2)
toff
Turn-Off Time
TYPICAL SWITCHING WAVEFORM
VDD
10%
10%
R1
tr
ton
90%
10%
R2
VOUT
10%
toff
Ω
50
INPUT PULSE
SAMPLING SCOPE
≤
Tr 0.2ns
≤
Rise Time 2ns
C
IN
2pF
≤
≥
Pulse Width 200ns
≥
10M
R
IN
Switching Times Test Circuit
NOTES:
1. Devices must not be tested at ±125V more than once, nor for longer than 300ms.
2. For design reference only, not 100% tested.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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